In this study, Tungsten Trioxide thin films were successfully synthesized at different substrate temperatures by pulse laser deposition. Structural, morphological and electrical properties of WO3 thin films, were investigated by X-ray diffraction (XRD), Atomic Force Microscope AFM), Scanning Electron Microscope (SEM), Hall Effect and sensing measurements.
The results was indicated that WO3 thin films prepared at 450ᵒC was optimum condition where sensitivity toward H2S gas has been measured, sensitivity was higher than other films preparation at (250ᵒC,350ᵒC) temperature.