Pulse laser deposition was used in this research by Nd:YAG laser with (λ=1064 nm average frequency 6 Hz and pulls duration 10 nm) to deposit an adopedZnO thin films with 0.02CuO with thickness (100) nm. X-ray diffraction pattern for Zinc oxide films with doping ratio of CuO shows that these films have polycrystalline hexagonal structure, and the X-ray diffraction patterns of porous silicon showed a broadening in the FHWM with increasing etching time. .From atomic force microscope of prepared samples show an average diameter of PS nanostructure. The operation temperature of gas sensor was studied for different temperature and found that the maximum sensitivity is (67.55) at T=350 cº.