AgSbSe2thin films with different thicknesses (100,300,500, and 700nm) have been deposited by single source vacuum thermal evaporation onto glass substrates at ambient temperature to study the effect of thickness on its structural morphology, and electrical properties. The X–ray diffraction patterns of AgSbSe2thin film show that with low thickness (t=100,300 and 500nm) have amorphous structure convert to polycrystalline structure with increase thickness to 700 nm..AFM measurements show that the average grain size increases while the average surface roughness decreases with the increase of thickness. The DC conductivity of the vacuum evaporated AgSbSe2thin films was measured in the temperature range (298-473)K and was found to increase on order of magnitude with increase of thickness. The plot of conductivity with reciprocal temperature suggests, there are two activation energies Ea1, andEa2 for AgSbSe2for all and thicknesses which decrease with increasing thickness. The electric carrier concentration and mobility show opposite dependence upon thickness.