Document Type : Research Paper
Authors
Department of Applied Sciences, The University of Technology, Baghdad - Iraq
Abstract
In this work photo-electrochemical etching was used to synthesize uniform and non-uniform macro porous silicon from n-type with orientation (100). Specimens were anodized in a sol of 25% HF: C2H2OH at 1:1 rate. Morphology and porosity of the samples were studied. Optical characteristics (reflection and photoluminescence) of PS samples by changing current density (10, 12, 14 and 16 mA/cm2 ) for fixed etching time (8min) and power density (17mW/cm2 ) by using red laser illumination wavelength (645nm) were investigated. Porous silicon samples imaged via scanning electron microscope (SEM), which showed the topography of silicon surface and pores distribution.
Keywords
Main Subjects
Isolated, High Aspect Ratio Microstructures in n-Type
Silicon (100),” MSc. Thesis, Department of Chemical
Engineering by, University of Mumbai, 2011.
[2] U.M. Nayef and M.W. Muayad, “Typical of
Morphological Properties of Porous Silicon,”
International Journal of Basic and Applied Sciences
IJBAS-IJENS Vol.13, No.02, 2013.
[3] J. Torres, H.M. Martinez, J.E. Alfonso and L.D.
Lopez C, “Optoelectronic study in porous silicon thin
films,” Microelectronics Journal, 39, 3-4, P.482-484,
2008.
[4] P. Vitanov, M. Kamenova, N. Tyutyundzhiev, and
V. Gantcheva, “Application of porous silicon layer in
photovoltaic devices,” Thin solid films, Vol. 297,
P.299-303, 1997.
[5] W.A. Badawy, “Porous Silicon Modified
Photovoltaic Junctions: An Approach to HighEfficiency Solar Cells,” AIP Conf. Proc., Vol. 14, No.8,
P.29-35, 2007.
[6] Ph. M. Fauchet and S. Member, IEEE, “Progress
Toward Nanoscale Silicon Light Emitters,” IEEE
Journal of selected topics in quantum electronics, Vol.
4, No. 6, P.1020-1028, 1998.
[7] P.G. Han, H. Wong, Andy H.P. Chan and M.C.
Poon, “Formation Mechanism of Light-emitting Porous
Silicon Prepared by Reactive Ions Etching,” 0-7803-
3166-4/96/$5.00© 1996 IEEE, 1996.
[8] K. Tsujino, M. Matsumura, Y. Nishimoto,
“Texturization of ulticrystalline silicon wafers for solar
cells by chemical treatment using metallic catalyst,”
Sol. Ene. Mater. & Solar Cells, Vol. 90, P.100–110,
2006.
[9] L.T. Canham, “Silicon quantum wire array
fabrication by electrochemical and chemical dissolution
of wafers,” Appl. Phys. Lett. 57, 10, 1046, 2006.
[10] F. Alfeel, F. Awad, I. Alghoraibi and F. Qamar,
“Using AFM to Determine the Porosity in Porous
Silicon,” Journal of Materials Science and Engineering,
p. 579-583, 2012.
[11] S. Mohammed and A.H. Shnieshil,
“Characteristics Study of Porous Silicon Produced by
Electrochemical Etching technique,” International
Journal of Application or Innovation in Engineering and
Management, Vol. 2, Issue 9, 2013.
[12] G. Wang, Sh. Fu. Y. Ye Li, and Q. Duanmu
“Optimization of macropore silicon morphology etched
by photo-electrochemistry,” Solid-State and IntegratedCircuit Technology, 2008. ICSICT 2008. 9th
International Conference on. IEEE, 2008.
[13] R.G. Kadhim, R.A Ismail, M. Abdulridha,
“Structural, Morphological, Chemical and Optical
Properties of Porous Silicon Prepared By
Electrochemical Etching,” International Journal of Thin
Films Science and Technology, 2015.
[14] A.M. Alwan, A.J. Haider and A.A. Jabbar,
“Modifying and fine controlling of sliver nanoparticle
nucleation sites and SERS performance by double
silicon etching process,” Plasmonics, 2017.
)
