Synthesis of Porous Silicon by Electrochemical Etching for Gas Sensor Application
Engineering and Technology Journal,
2022, Volume 40, Issue 4, Pages 555-562
AbstractIn the present study, the layers of porous Silicon (PS) have been produced from the p-type Silicon with a (100) orientation using the approach of electrochemical etching. The samples were anodized in a solution of HF concentration 18% and 99% C2H2OH. Samples characteristics of PS were studied by etching time constant (15 min). In addition, the alteration of the current density value into (5, 10,15,20, and 25) mA/ cm2 was also studied. Samples were characterized by nanocrystalline porous Silicon via X-Ray Diffraction (XRD). The AFM (Atomic force microscope) analysis of PS shows the sponge-like structure. Also, a 39.76 nm average diameter was coordinated in the rod-like temperature variation, fabricated from prepared samples on the sensor's sensitivity, recovery time, and response time. The maximal level of the sensitivity has been approximately (20,11)% for porous Silicon of gas NO2 and NH3, respectively.
- Preparation of porous Silicon (PS) by photo-electrochemical etching method.
- Study of structural, morphological, and electrical properties for porous Silicon.
- Fabrication of Al/PS/Si/Al as gases sensor.
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