Document Type : Research Paper

Authors

• Duha H. Jwied ¹
• Uday M. Nayef ¹
• Falah AH Mutlak ²

¹ Applied Sciences Dept., University of Technology-Iraq, Alsina’a street, 10066 Baghdad, Iraq.

² College of Science, University of Baghdad, Baghdad, Iraq

Abstract

In the present study, the layers of porous Silicon (PS) have been produced from the p-type Silicon with a (100) orientation using the approach of electrochemical etching. The samples were anodized in a solution of HF concentration 18% and 99% C₂H₂OH. Samples characteristics of PS were studied by etching time constant (15 min). In addition, the alteration of the current density value into (5, 10,15,20, and 25) mA/ cm² was also studied. Samples were characterized by nanocrystalline porous Silicon via X-Ray Diffraction (XRD). The AFM (Atomic force microscope) analysis of PS shows the sponge-like structure. Also, a 39.76 nm average diameter was coordinated in the rod-like temperature variation, fabricated from prepared samples on the sensor's sensitivity, recovery time, and response time. The maximal level of the sensitivity has been approximately (20,11)% for porous Silicon of gas NO₂ and NH_3, respectively.

Graphical Abstract

Highlights

• Preparation of porous Silicon (PS) by photo-electrochemical etching method.
• Study of structural, morphological, and electrical properties for porous Silicon.

• Fabrication of Al/PS/Si/Al as gases sensor.

Keywords

• porous silicon
• Electrochemical etching method
• X-Ray Diffraction
• Gas Sensor

Main Subjects

• Chemistry
• Physics