Influence of Machining Parameters on Surface Roughness in Chemical Machining of Silicon Carbide (SiC)
AbstractThis study discussed the influence of chemical machining parameters such as (machining time, type of etchant, etching temperature, and concentration of the solution) on the surface roughness of ceramic material (silicon carbide) as a workpiece in the chemical machining (CHM) process. To achieve the best value for surface roughness. In this research, four levels of factors affecting the chemical etching process were used, the values of etching temperature (60, 80, 100, and 120) °C, the etchant concentration (50, 60, 70, and 80) %, and machining time (30, 50, 70, and 90) min, and two etchant type (HBr, HCl). Experiments proved the best value of surface roughness is obtained (2.933) µm experimentally and (2.958) µm at a predictable program when using hydrochloric acid (HCl) at a temperature (80) °C, time (50) min, and etchant concentration (50) %. The coefficient determination (R-sq) to predict the surface roughness is ((93.7).
- Influence of chemical machining parameters on the surface roughness of ceramic material (silicon carbide).
- The best surface roughness value is obtained (2.933) µm experimentally and (2.958) µm at a predictable program.
- The coefficient determination (R-sq) to predict the surface roughness is ((93.7).
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