IGBT (Insulated-gate bipolar transistor), is used widely in high voltage applications, it is very important to realize the doping profile in order to understand the design and the electrical performances of such devices. The performance depends on the layer, doping, and a carrier distribution among each layer. A specific selected layer can be added with precise properties for enhancing the device and increase the low current operate requirement. In this paper, an IGBT device is an enhanced and better performance achieved by the addition of a heavily positive doped intermediate layer. The collector current is decreased from 0.05 mA to 0.03 mA at 600 V. Decreasing the current results in higher efficient device by decreasing the amount of heat produced by the device.