Authors
University of Technology-Iraq
Abstract
The purpose of this paper is the determination of multiplication factor M for optimum behaviour of avalanche photodetectors. We compare two types of avalanche photodetectors: a silicon structure R.A.P.D.N+π P πP+ and GaAl heterostructures .In the calculation of the noise equivalent power ( NEP )of Whole System we use the law Si (f)=2qIpho Mx experimentally determined in the broth avalanche photodetectors. The exposure X between 2 and 4 is preponderant in the NEP expression and the ideal NEP for avalanche photodetector system is obtained when X equals 2.
Main Subjects
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