Authors

• Duaa A. Mohammed ¹
• Muslim F. Jawad ²

¹ Applied Science Department, University of Technology, Baghdad, Iraq.

² Applied Science Department, University of Technology, Baghdad, Iraq

Abstract

In this study, In2O3 thin films were deposited on quartz substrates by
pulsed laser deposition technique at room temperature and followed by
thermally annealing at 300℃, 400℃ and 500℃ for 1 hour. The optical band
gap was found to increase with the annealing temperature from 3.5 to 3.85 eV
and the transmittance was observed above 90%. XRD results show that the films
are polycrystalline in nature and crystallizes with preferred orientation (222).
SEM images show that the films are

Keywords

• PLD
• In2O3 thin films
• SEM
• Morphological properties

Main Subjects

• Science