In this study, In2O3 thin films were deposited on quartz substrates by
pulsed laser deposition technique at room temperature and followed by
thermally annealing at 300℃, 400℃ and 500℃ for 1 hour. The optical band
gap was found to increase with the annealing temperature from 3.5 to 3.85 eV
and the transmittance was observed above 90%. XRD results show that the films
are polycrystalline in nature and crystallizes with preferred orientation (222).
SEM images show that the films are