Authors
Abstract
In this paper, a laser ellipsometric method is implemented to study the
formation of oxide films on silicon substrate at room temperature in air. Two
lasers, He-Ne and semiconductor diode, as well as a tungsten halogen lamp,
were used as a light source in this method to show the importance of
coherency for accurate results. The thickness of oxide layer was measured and
the results is compared with that calculated for a monolayer of oxide.
Behavior of thermally formed oxides was studied using ellipsometry to
determine polarizer angle as a function of etching time.
Keywords
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