Author
Abstract
Electrical properties of p-PbSe/p-Si heterojunction detector have been
investigated. The electrical properties under dark condition show a rectifying
behaviour with low rectification factor, and exhibits soft breakdown reverse
current.
C-V characteristics suggest that the fabricated diode was abrupt type, built
in potential determined by extrapolation from 1/C2-V curve to the point (V=0)
and it was equal to (0.49V).
Results of I-V characteristics under illumination conditions with reverse
bias voltage exhibit linear behavior with no saturation limit.
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