Document Type : Research Paper
Author
Dep. Of Applied Science University of technology. Baghdad-Iraq
Abstract
Abstract Electrical and optoelectronic properties of p - PbSe / n - Si heterojunction detector have been investigated . The electrical properties under dark condition show a rectifying behaviour with low rectification factor , and exhibits soft breakdown reverse current . C - V characteristics suggest that the fabricated diode was abrupt type , built in potential determined by extrapolation from C - V curve to the point ( V - 0 ) and it was equal to ( 2.25V ) . Results of I - V characteristics under illumination conditions with reverse bias voltage exhibit linear behaviour with no saturation limit
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