Document Type : Research Paper
Author
School Of Applied Sciences /University of Technology
Abstract
Abstract In the present paper , silicon p - n junction detector of 600 + 25 nm peak response has been characterized . This peak was obtained by depositing high purity Au thin film onto sensitive side of the p - n junction ( donor - side ) , this film reduces the responsivity in the near - IR region ( 800-1100 ) nm and leads to peak response at 600 nm . The white light photovoltaic characteristics , spectral responsivity , and quantum efficiency are greatly depended on the photon transmission of Au film . Experimental results showed that the detector responsivity in the near IR region was reduced to about 18.5 % from its initial value after depositing 30 nm Au film .
Keywords
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