Authors
Abstract
In this work, an ordinary light is used for photo-chemical etching of n-type
silicon wafer in HF solution. Scanning electron microscopy is used to monitor
changes in surface morphology produced during the etching process. Uniform
porous layer has been observed for various irradiation time. Our technique
offers a great controlling parameter on the porous layer uniformity compared
with the porous layer achieved by using a laser beam. Electrical properties
and porous layer thickness of the photo produced layer have been studied
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