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Abstract
In the present work, the electrical and photovoltaic properties of In-pSi contact were investigated for the first time. Two creditable methods were used to determine the value of barrier height for this contact. Experimental results shows a reasonable agreement with the simple Schottcky-Mott theory. The contact shows good response to white light when it works under bias condition. Peak response of 0.22 A/W at 850 nm wavelength was registered.
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