Document Type : Research Paper

Authors

• Raid A. Ismail ¹
• Khalid Z. Al - Ta'ai ²
• Manaf R. Ismail ²

¹ Dep. of Applied science University of Technology-IRAQ.

² Dep. of Applied science University of Technology Baghdad-IRAQ.

Abstract

Abstract In the present work , p - type Si wafer of ( 111 ) orientation and 3 0.cm resistivity had been doped with phosphor by thermal diffusion process to fabricate p - n junction detector . The main optoelectronic properties of the fabricated detectors were studied . Thin films of ultrapure Cu , Bi , Ag , and Al were deposited on the sensitive area of the detectors ( donor side ) . On the base of the transmission and absorption phenomena of the deposited films , peak response data of these detectors that conventionally at near IR ( 850-900 nm ) before deposition was reduced and resulted in peak response at 600 ± 25 nm after deposition .

Keywords

• Keywords : Metals / p - nSi
• Thermal Evaporation
• Optoelectronic Properties