In the present paper, nanostructure tin oxide (SnO2) thin films on Si P-type
substrates heterojunction solar cell has been made by using a pulsed 532 nm Nd:YAG
laser. Deposition of films is achieved at 400 °C substrate temperatures. The X-ray
diffraction (XRD) results show that the deposited films are crystalline with tetragonal
rutile SnO2 structure. The morphology of deposited films were characterized by
scanning electron microscope (SEM) and atomic force microscope (AFM), the grain
size value (30–50) nm and rms roughness values are (2.8 nm) for thin films
deposited at 400ºC. Photoluminescence PL spectrum showed good light emission in
the visible field. The photovoltaic characteristics included short circuit current (Jsc),
open circuit voltage (Voc), where the maximum (Jsc) and (Voc)obtained at AM1
were 14.3 (mA cm-2) and 630(mV), respectively. The fill factor (FF) was (0.68). The
fabricated cell exhibits good performance with 7 % conversion efficiency.