Two laser systems work with different operational modes have been used to
produce silicon nanostructure surfaces. Pulsed Nd:YAG laser has been employed to
produce silicon textured surface which containing nano/microstructures. Effects of
laser energies (80 – 200) mj were examined to produce surface of different structures.
While Diode laser (532 nm) of fixed power (50 mW) was used in the second stage to
modify the porous structure over the textured surface. The effect of different surface
morphology on the laser induced etching process was studied using atomic force
microscope (AFM) and an image processing program to sketch the surface plot to the
samples depending on the optical microscope photos. The photoluminescence spectra
have been utilized to study the nanocrystallite size distribution in porous silicon, it
shows high peak position lies in (2 - 2.1) eV.