Author
Abstract
In this work, as Study on the structural and electrical properties of
Pbo.9Sn0.1Se/Si hetrojunction was made by depositing compound of Lead, Tin
and Selenide film on Si by thermal evaporation.
XRD diffraction analysis of the film, shows the dominant crystal
orientation is (200) as well as (Pbo.9Sn0.1Se) film deposited is polycrystalline
structure.
Electrical properties of Pbo.9Sn0.1Se/Si heterojunction detector have been
investigated. The electrical properties under dark condition show a rectifying
behavior with low rectification factor, and exhibit soft breakdown reverse
current. C-V characteristics suggest that the fabricated diode was abrupt
type, built in potential determined by extrapolation from 1/C2-V curve to the
point (V=0) and it was equal to (0.4V).
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