Authors
Abstract
The study was carried out by the preparing of PbTe thin films and studying the
effect of annealing temperatures on electrical and optical properties.
The PbTe thin films have been prepared by thermal evaporation in a vacuum of
(2*10-5) Torr with thickness 500nm at room temperature and annealed at different
annealing temperatures of (373,423,473)K for 30 min.
The electrical measurements show that the PbTe thin films have two kinds of
activation energy which increases with increasing annealing temperature.
The Hall Effect measurements prove that thin films are n-type at room temperature
and convert to p-type by annealing temperature and it is found that
NH decreases with increasing annealing temperature but μH increases with increasing
annealing temperature.
The optical measurements show that the PbTe thin films have direct energy gap
which show that energy gap increases with increasing annealing temperatures and it
is found the transmittance increases with increasing annealing temperatures
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