In this work, ZnO thin films were grown on sapphire (0001) substrate by
Pulsed Laser Deposition using SHG with Q-switched Nd:YAG pulsed laser operation
at 532nm in O2 gas ambient 5×10-2 mbar at different substrate temperatures varying
from room temperature to 500°C. The influence of the substrate temperature on the
structural and morphological properties of the films were investigated using XRD and
SEM. As result, at substrate 400°C, a good quality and crystalline films were deposited
that exhibits an average grain size (XRD) of 22.42nm with an average grain size
(SEM) of 21.31nm.