Optoelectronic properties of ZnO/PS/n-Si Heterojunctions
Engineering and Technology Journal,
2008, Volume 26, Issue 4, Pages 442-448
Abstract
In this work a colloid of nanocrystalline ZnO particles is prepared bychemical method, and then sprayed on porous silicon substrate which is prepared
by electrochemical etching under a current density of 15mA/cm2 for 10 min. The
initial radius of the ZnO particles is found to be (2.2 nm). FTIR spectra exhibit the
presence of Zn – O bond which indicates the formation of ZnO particles. Also
spectra reveals the formation of SiHx (x=1-2) and Si-O bond which indicates the
presence of porous layer. High performance rectifying was obtained, with high
photoresponsivety of 0.54 A/W at 400 nm. The corresponding quantum efficiency
was 166.7%.The results show that ZnO on porous silicon (PS) structures will act as
good candidates for making highly efficient photodiodes.
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