Highly (101)-oriented p-Ag2O thin film with high electrical resistivily
was grown by thermal oxidation (TO) on clean monocrystalline p-type Si
without any post- deposition annealing. From optical transmittance and
absorptance data, the direct optical band gap was found to be 1.4eV. The
electrical and photovoltaic properties of Ag2O/Si isotope heterojunction
were examined in the absence of any buffer layer. Ideality factor of
heterojunction was found to be 3.9. Photoresponse result revealed that there
are two peaks located at. 750 nm and 900nm .