Author
Abstract
The optical response characteristics of Se/Sb thin film heterojunction deposited on
a p-type silicon substrate were studied. Results indicated that the obtained isotype
heterojunction is linearly graded and has 0.8V built-in potential. Also, the maximum
spectral responsivity and maximum quantum efficiency were obtained at the region of (600-
650) nm and the detectivity was about 7.77x1010 cm.Hz 1/2.W-1. Response time of the
manufactured detector was about 225ns. This work is a good attempt to manufacture the
heterojunction detector from V and VI elements.
Keywords
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