Preparation and the study optical and electrical properties of thin films for optoelectronic applications
Engineering and Technology Journal,
2008, Volume 26, Issue 7, Pages 824-828
Abstract
Conductive transparent In2O3 thin films with (222) preferred orientation wereprepared by thermal oxidation (TO) in static air of indium thin films at condition
(250°C/25 min). Detailed structural, electrical, and optical characteristics of the
film are presented. The data are interpreted to give a direct band gap of
(3.6) eV and indirect band gap of (2.5) eV. The In2O3 film has sheet resistance as
low as (20)Ω/□ . in absence of any post-deposition annealing conditions. The
mobility of these films was estimated to be (31) cm2. V-1. s-1.
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