Conductive transparent In2O3 thin films with (222) preferred orientation were
prepared by thermal oxidation (TO) in static air of indium thin films at condition
(250°C/25 min). Detailed structural, electrical, and optical characteristics of the
film are presented. The data are interpreted to give a direct band gap of
(3.6) eV and indirect band gap of (2.5) eV. The In2O3 film has sheet resistance as
low as (20)Ω/□ . in absence of any post-deposition annealing conditions. The
mobility of these films was estimated to be (31) cm2. V-1. s-1.