Authors
Abstract
In this work, thermal evaporation system was employed to deposit thin films of SiC on
glass substrates in order to determine the parameters of them. Measurements included
transmission, absorption, Seebak effect, resistivity and conductivity, absorption coefficient,
type of energy band-gap, extinction coefficient as functions of photon energy and the effect
of increasing film thickness on transmittance. Results explained that SiC thin film is an ntype
semiconductor of indirect energy and-gap of ~3eV,cut-off wavelength of 448 nm,
absorption coefficient of 3.4395x104cm-1 and extinction coefficient of 0.154. The
experimental measured values are in good agreement with the typical values of SiC thin
films prepared by other advanced deposition techniques.
Keywords
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