Authors
Abstract
In the present work , schottky photodiode have been mode on n-type SiC
by depositing of thin layer of In . electrical characteristics included I-V
(dark and illumination ) have been investigated . Ideality factor is 1.6 and
barrier height is 0.53 eV was calculated from I-V and Isc-Voc
characteristics, Ideality factor is 1.7 and barrier height found to be 0.64 eV,
and from optoelectronic characteristics have found sensitivity results show
that peak response of photodiode was 550nm .
Keywords
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