Author
Abstract
In the present work , PIN photodetector has been fabricated by vacuum evaporation
technique, Al was evaporated on top side of an intrinsic – type silicon and In was evaporated
on down side and doped for each sides of an intrinsic silicon with thermal diffusion technique
using a furnace system, in this method PIN photodetector is made.
The optoelectronic and electrical properties of photodetector were studied ,PIN has
spectral responsivity in visible and near infrared region and has peak responsivity at
wavelength 900nm ,I-V characteristic under dark condition the ideality factor is 3.2 and builtin-
potential was determined by extrapolation of the curve (1/C3) to a point 1/C3=0 equal 0.8v.
a high speed response for the photodetector was determined , it is equal less than 2.35nS.
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