Highly (101)-oriented p-Ag2O thin film with high electrical resistivily was grown by
thermal oxidation (TO) on clean monocrystalline p-type Si without any post- deposition
annealing. From optical transmittance and absorptance data, the direct optical band gap
was found to be 1.4eV. The electrical and photovoltaic properties of Ag2O/Si isotope
heterojunction were examined in the absence of any buffer layer. Ideality factor of
heterojunction was found to be 3.9. Photoresponse result revealed that there are two peaks
located at. 750 nm and 900nm .