Study Optoelectronic Properties of Ag2O Heterojunction Prepered by Thermal Oxidation Technique
Engineering and Technology Journal,
2008, Volume 26, Issue 10, Pages 1201-1209
Abstract
Highly (101)-oriented p-Ag2O thin film with high electrical resistivily was grown bythermal oxidation (TO) on clean monocrystalline p-type Si without any post- deposition
annealing. From optical transmittance and absorptance data, the direct optical band gap
was found to be 1.4eV. The electrical and photovoltaic properties of Ag2O/Si isotope
heterojunction were examined in the absence of any buffer layer. Ideality factor of
heterojunction was found to be 3.9. Photoresponse result revealed that there are two peaks
located at. 750 nm and 900nm .
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