Study the Properties of Silicon Nanocrystallites Prepared By Wet Etching
Engineering and Technology Journal,
2010, Volume 28, Issue 2, Pages 301-306
Abstract
This work presents the formation of porous silicon by photo-electrochemicalprocesses using diode laser 514 nm, 2mW, under different etching times. The time
dependence of porosity values, layer thickness, pore diameter, pore shape ,wall
thickness, and etching rate were studied based on SEM images.
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