This paper reports morphological properties of porous silicon and oxidized
porous silicon, prepared by photo electrochemical etching from n-type silicon wafers as
a function of experimental parameters. Scanning electron microscopic (SEM)
Observations of porous silicon layers were obtained before and after rapid thermal
oxidation process under different preparation and oxidation conditions .The surface
morphology, Pore diameter, wall thickness, pore shape and porosity values were,
studied based on microstructure analyses of (SEM) images.