Abstract
Abstract
The crystal orientation of a semiconductor play a significant role to effects the
characteristics of manufactured semiconductor solar cells and the optical detectors.
In this research we use the chemical etching technique and microscopic testing
to determine the crystal orientation of the silicon wafer, where mechanical
polishing and Wet Etching described the geometric dislocations pits which refers
to thecrystallographicorientation. Microscopic examination has been describing
differences geometric dislocations pits which reflected from plane (111) in the
silicon wafer, by the impact of different chemical solutions. CP-4 etch appear
dislocations pits in geometric forms flat trigonometric, while using KOH solution
show that pits in conical shape which refers to the vector [111] for silicon wafer.
In this work acid chromium oxide solution has been used to showing the
geometric dislocations pits of plane (100) in the forms of four fold flat symmetry
which refers to that plane in Silicon wafer, as the distribution of Miller Indices in
the cubic system.
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