Engineering and Technology Journal

Abstract

The surface area of porous silicon layers produced by different methods has
been measured in this work. It is found that the surface area of the porous silicon
is optimum when high laser power density is used to etch n –type silicon wafer via
the laser induced etching process compared with that for porous silicon produced
by lower laser power density or by electrochemical etching process. A scanning
electron microscope (SEM) micrographs were used to estimate the surface area.
The surface area of the porous layer is strongly dependent on the porous layer
geometry and its depth.