Authors
Abstract
Porous silicon was fabricated at p-n junction wafer by
photoelectrochemical (PEC) etching. Silicon wafer with various electrolyte
containing different HF concentrations was used to explain PS formation by the
reaction at the Si/ electrolyte interface. An investigation of the dependence on HF
concentration to formed PS layer was made. The surface morphology of PS layer
was study as a function of HF concentration. Pillar like structures are formed at
low HF concentration and pores structures are obtained a at higher HF
concentration (40%). The etching rate increases with increasing HF concentration
causing faster silicon dissolution. Thus the total pillar volume would increase by
increasing the HF concentration.
Keywords
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