Abstract
In this work, a theoretical multi-layer structure was presented to investigate the
nonlinear optical behavior induced by free electrons in a thin layer of highly-doped
n-type GaAs at the MIR wavelengths. The multi-layer structure is considered to
enhance absorption by a semiconductor thin layer. The intensity-dependent
reflection properties were analyzed and the results explained the possibility to
increase the optical sensitivity of the multi-layer structure compared to that in
GaAs bulk.
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