Author
Abstract
In this work, ultrathin trillium films were evaporated on chemically etched
silicon substrate. Schottky barrier heights (SBHs) of Te contacting to n-Si were
determined by analyzing dark current-Voltage (I-V) curves and illuminated short
circuit current-open circuit voltage (Isc-Voc) curves. To eliminate the effect of
series resistance we used Norde method to extract effective SBHs. Experimental
results showed good reasonable agreement of the barrier height values. There is
more than one mechanism to transport the current through the barrier. The
possibility of using Te-nSi as a photovoltaic device is presented in this work.
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