The Effect Of Thermal Oxidation Time On The Structure And Influence On Optical Properties For Porous Silicon Prepared By Photo Electrochemical Etching
Engineering and Technology Journal,
2009, Volume 27, Issue 4, Pages 727-735
Abstract
The morphological properties of the freshly and oxidized porous silicon atoxidation time (60, 90) sec were studied. A blue emission from PSi can be seen with
eyes after thermal oxidation because the increasing of energy gab due to decreased
silicon column (nano particles).Pore size and shape of n-type wafers are estimate and
correlated with optical properties before and after rapid thermal oxidation (RTO).
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