Author
Abstract
Diffusion of nickel in GaAs has been studied at 950ºC. The diffusion was
enhanced during limited interval and for different quantities of As. Nickel atoms
had diffused in the beginning due to the interstitial movement of atoms but large
number of nickel atoms occupies substantial locations in p-type GaAs lattice.
Measurements performed to the samples have showed good agreement between the
nickel atoms concentration and majority charge-carriers in p-type semiconductor
(holes). Measurements explained that electrical conductivity of p-type samples was
not due to system heating but to the diffusion of nickel atoms occupying sites of
gallium atoms.
Keywords
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