Abstract
An optical window for mid infrared region (8-12)mm has been fabricated by
depositing Yttrium oxide (Y2O3) on zinc selenide (ZnSe) substrate.
The effect of accelerating voltages has been studied in order to control the
quality of the thin film.
It has been found that the best transmission of (Y2O3) thin film on ZnSe
substrate is about 98% when an accelerating voltage of 5kv has been applied, for
thin film thickness of quarter of design wavelength (10mm).
)
