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Abstract

Anodic electrochemical etching enhanced by ultrasonically is developed to fabricate luminescent porous silicon (PS) material. The samples prepared by the new etching method exhibit superior characteristics to those prepared by conventional direct current etching. By applying ultrasonically enhanced etching, PS microcavities with much higher quality factors can be fabricated. The improved quality induced by
ultrasonic etching can be ascribed to increased rates of escape of hydrogen bubbles and other etched chemical species from the porous silicon pores surface.

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