Barium and Holmium have been introduced into polycrystalline lead iodide during
solution growth of thin films. Electrical characterization (current vs. voltage measurements ,
resistivity, carrier concentration and mobilities as a function of the doping concentrations)
clearly demonstrates that both dopants introduce donor level in the PbI2 band gap and
compensate for the native acceptor defects of lead iodide, Barium as a dopant having the
greater influence.