Physical Properties of MOS Porous Silicon Detector Fabricated under RTO Method
Engineering and Technology Journal,
2009, Volume 27, Issue 11, Pages 2286-2291
Abstract
In this research we studying the sensitivity of a porous silicon photo detector, wefound it improved through rapid thermal oxidation processes. Under our optimum
preparation conditions, photocurrent can reach about 3408 μA (under power density 100
mW/cm2 tungsten lamp illumination) and dark current is about 300μA
(at reverse bias of 5V).
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