Authors
10.30684/etj.27.11.10
Abstract
In this research we studying the sensitivity of a porous silicon photo detector, we
found it improved through rapid thermal oxidation processes. Under our optimum
preparation conditions, photocurrent can reach about 3408 μA (under power density 100
mW/cm2 tungsten lamp illumination) and dark current is about 300μA
(at reverse bias of 5V).
Keywords
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