Engineering and Technology Journal,
2009, Volume 27, Issue 14, Pages 500-506
AbstractIn the present work, enhancement of the electrical and photovoltaic properties of CdO/ Si heterojunction device has been carried out. This has done by using classical thermal annealing process at different temperatures reaching to the optimum value at optimum of 15 sec. The device is constructed using pulse laser deposition technique
using puled Nd-Yag laser of 170 mJ energy and 400ms pulse duration. The obtained results show a good enhancement at optimum annealing temperature of 448K.
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