Engineering and Technology Journal

Abstract

(n-p) PbS-Si HJ detector has been fabricated by pyrolytic spraying of PbS
heterolayer onto p-type silicon wafer. PbS-side of illumination in the wavelength
range (450-1150 nm) revealed that the quantum efficiency plateau fairly conforms
to that of Si homojunction. Significant specific detectivity of about 8.5 x 1011 cm
Hz1/2 W-1 has been obtained at 850 nm wavelength. Signal to noise ratio revealed
an optimum operation voltage at 2.5 V.