Studying the Effect of Annealing Temperature on some Physical Properties of In2O3 Thin Films

Authors

• Duaa Mohammed, Applied Science Department, University of Technology, Baghdad, Iraq.Follow
• Muslim Jawad, Applied Science Department, University of Technology, Baghdad, IraqFollow

Keywords

PLD, In2O3 thin films, SEM, Morphological properties

Document Type

Research Paper

Abstract

In this study, In2O3 thin films were deposited on quartz substrates bypulsed laser deposition technique at room temperature and followed bythermally annealing at 300℃, 400℃ and 500℃ for 1 hour. The optical bandgap was found to increase with the annealing temperature from 3.5 to 3.85 eVand the transmittance was observed above 90%. XRD results show that the filmsare polycrystalline in nature and crystallizes with preferred orientation (222).SEM images show that the films are

Recommended Citation

Mohammed, Duaa and Jawad, Muslim (2026) "Studying the Effect of Annealing Temperature on some Physical Properties of In2O3 Thin Films," Engineering and Technology Journal: Vol. 36: Iss. 2, Article 20.
DOI: https://doi.org/10.30684/etj.36.2B.5

DOI

10.30684/etj.36.2B.5

First Page

124

Last Page

127