Gain Characteristics of Silicon Transistor Treated by Laser
Gain Characteristics of Silicon Transistor Treated by Laser

O. Mahdi Rana

Volume 25, Issue 7 , September 2007, , Page 890-896

https://doi.org/10.30684/etj.25.7.7

Abstract
  In this work, profiles of laser-induced diffusion of arsenic in silicon arepresented. These profiles are considered to attempt increasing of the currentgain of silicon transistors. ...  Read More ...
Normalized Characteristics of Laser-Induced Diffusion of Arsenic Dopants in Silicon
Normalized Characteristics of Laser-Induced Diffusion of Arsenic Dopants in Silicon

Oday A. Hamadi; Salma M. Hussain

Volume 25, Issue 4 , June 2007, , Page 584-590

https://doi.org/10.30684/etj.25.4.6

Abstract
  In this work, normalized characteristics of laser-induced diffusion ofarsenic in silicon are presented. These characteristics are considered as areenhancing the As-doped silicon-based ...  Read More ...