Authors
Abstract
In this work, the single beam scanning technique was employed to express
the nonlinear interaction between laser radiation and semiconductor material
(lead sulfide) as well as to determine the thermooptic coefficient of the
material (lead sulfide). Direct measurement, low cost and reliability are the
main features of this technique. The value of the thermooptic coefficient was
determined to be -5.8x10-5K-1 for PbS thin film. Due to authors review, this is
the first attempt in Iraq to measure such parameter in semiconductor thin
films.
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