Author
Abstract
The optoelectronic properties of (Al/c-Si) and sandwich structure type
(Al/PS/c-Si/Al) were reported. The nanostructure porous silicon is obtained by
photochemical etching without applying electric field. The photosensitivity of
(Al/PS/c-Si/Al) structure is determined by porous layer photoconduction.
Maximum spectral sensitivity of the porous layer is changed from (575-
610)nm depending on preparation condition.
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