Abstract
In this work, cadmium-silicon contacts were produced by plasma- assisted sputtering (PAS) technique and compared to those produced by vacuum thermal evaporation (VTE). Results explained that the contact produced by PAS technique had ohmic characteristics although the conductivity type of silicon substrate changes. Whereas the contact produced by VTE technique is rectifying or Schottky contact. The values of specified contact resistance was (7.32.em²) and (6.92.cm³) for n-type and p-type substrates, respectively. The PAS is one of the promising techniques employed to produce large-scaled ohmic contacts and electronic devices those used in solar energy systems and large flat displays.
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