Document Type : Research Paper
Author
Applied science Dept., University of Technology Baghdad-IRAQ
Abstract
Abstract:Metal - Semi Conductor - Metal ( MSM ) Photo detectors on semi - insulting Inp : Fe with a lateral planer structure ( double Schottky photodiode ) have been fabricated . the detector exhibits low dark currents of about 6 nA , an impulse response time of 15 psec . , Full width at half maximum ( FWHM ) ( 25 Psec . ) , and an internal quantum efficiency of 70 % , all at 10V bias . . Response time is almost independent on biasing voltage , while the dependence of photocurrent on biasing reflects the increasing in the quantum efficiency . The photocurrent increase linearly with incident power radiation for all bias voltage greater than 0.6v .
Keywords
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